Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

Published 2012 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 59, Issue 6, Pages 3258-3264
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-12-12
DOI
10.1109/tns.2012.2223763

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.