Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
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Title
Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 18, Pages 182105
Publisher
AIP Publishing
Online
2016-05-06
DOI
10.1063/1.4948944
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Note: Only part of the references are listed.- Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption
- (2016) Patrick Vogt et al. APPLIED PHYSICS LETTERS
- Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
- (2016) Marko J. Tadjer et al. JOURNAL OF ELECTRONIC MATERIALS
- β-Ga2O3 thin films on sapphire pre-seeded by homo-self-templated buffer layer for solar-blind UV photodetector
- (2016) X.Z. Liu et al. OPTICAL MATERIALS
- High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
- (2015) Toshiyuki Oishi et al. Applied Physics Express
- Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga2O3 thin films
- (2015) Zhenping Wu et al. APPLIED PHYSICS LETTERS
- Synthesis of Wide Bandgap β-Ga2O3 Rods on 3C-SiC-on-Si
- (2015) Subrina Rafique et al. CRYSTAL GROWTH & DESIGN
- Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE
- (2015) D. Gogova et al. CRYSTENGCOMM
- Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD
- (2015) Xuejian Du et al. JOURNAL OF MATERIALS SCIENCE
- Synthesis of wide bandgap Ga2O3(Eg ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition
- (2015) Subrina Rafique et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Temperature-dependent thermal conductivity in Mg-doped and undopedβ-Ga2O3bulk-crystals
- (2015) M Handwerg et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy
- (2014) Hironori Okumura et al. Applied Physics Express
- Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy
- (2014) Hisashi Murakami et al. Applied Physics Express
- On the bulk β-Ga2O3 single crystals grown by the Czochralski method
- (2014) Zbigniew Galazka et al. JOURNAL OF CRYSTAL GROWTH
- Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
- (2014) Kohei Sasaki et al. JOURNAL OF CRYSTAL GROWTH
- Characterization of homoepitaxial β-Ga2O3 films prepared by metal–organic chemical vapor deposition
- (2014) Xuejian Du et al. JOURNAL OF CRYSTAL GROWTH
- Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor
- (2014) Nick M. Sbrockey et al. JOURNAL OF ELECTRONIC MATERIALS
- Study of iron-catalysed growth ofβ-Ga2O3nanowires and their detailed characterization using TEM, Raman and cathodoluminescence techniques
- (2014) Sudheer Kumar et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Structural and optical evolution of Ga2O3/glass thin films deposited by radio frequency magnetron sputtering
- (2014) K.H. Choi et al. MATERIALS LETTERS
- Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
- (2014) Daoyou Guo et al. Optical Materials Express
- Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
- (2013) Masataka Higashiwaki et al. APPLIED PHYSICS LETTERS
- Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition
- (2013) F.B. Zhang et al. JOURNAL OF CRYSTAL GROWTH
- Development of gallium oxide power devices
- (2013) Masataka Higashiwaki et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy
- (2013) Guenter Wagner et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Control of the conductivity of Si-doped β-Ga2O3thin films via growth temperature and pressure
- (2013) Stefan Müller et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- (2012) Kohei Sasaki et al. Applied Physics Express
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
- (2012) Masataka Higashiwaki et al. APPLIED PHYSICS LETTERS
- Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition
- (2012) Wei Mi et al. JOURNAL OF CRYSTAL GROWTH
- Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition
- (2012) Sin-Liang Ou et al. MATERIALS CHEMISTRY AND PHYSICS
- Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique
- (2012) Yu Lv et al. VACUUM
- Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
- (2011) K. Irmscher et al. JOURNAL OF APPLIED PHYSICS
- Synthesis and characterization of silicon-doped gallium oxide nanowires for optoelectronic UV applications
- (2011) Joaquín Díaz et al. JOURNAL OF NANOPARTICLE RESEARCH
- Czochralski growth and characterization of β-Ga2O3 single crystals
- (2010) Z. Galazka et al. CRYSTAL RESEARCH AND TECHNOLOGY
- β-Ga2O3 growth by plasma-assisted molecular beam epitaxy
- (2010) Min-Ying Tsai et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)
- (2009) T. C. Lovejoy et al. APPLIED PHYSICS LETTERS
- $bmbeta$-Ga$_{2}$O$_{3}$ Nanowires and Nanobelts Synthesized byUsing GaAs Powder Evaporation
- (2009) Hee-Suk Chung et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Growth of β-Ga2O3on Al2O3and GaAs using metal-organic vapor-phase epitaxy
- (2009) Volker Gottschalch et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
- (2008) Encarnación G. Víllora et al. APPLIED PHYSICS LETTERS
- Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
- (2008) Hideo Aida et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Surface morphology of homoepitaxial β-Ga2O3 thin films grown by molecular beam epitaxy
- (2007) Takayoshi Oshima et al. THIN SOLID FILMS
- Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing
- (2007) Shigeo Ohira et al. THIN SOLID FILMS
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