The effect of Ga content on In2xGa2−2xO3nanowire transistor characteristics

Published 2012 View Full Article

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Title
The effect of Ga content on In2xGa2−2xO3nanowire transistor characteristics
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 23, Issue 30, Pages 305203
Publisher
IOP Publishing
Online
2012-07-02
DOI
10.1088/0957-4484/23/30/305203

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