Electron channel mobility in silicon-doped Ga2O3MOSFETs with a resistive buffer layer

Published 2016 View Full Article

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Title
Electron channel mobility in silicon-doped Ga2O3MOSFETs with a resistive buffer layer
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 55, Issue 12, Pages 1202B9
Publisher
Japan Society of Applied Physics
Online
2016-10-31
DOI
10.7567/jjap.55.1202b9

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