Reduction in edge dislocation density in corundum-structured α-Ga2O3layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3buffer layers

Title
Reduction in edge dislocation density in corundum-structured α-Ga2O3layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3buffer layers
Authors
Keywords
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Journal
Applied Physics Express
Volume 9, Issue 7, Pages 071101
Publisher
Japan Society of Applied Physics
Online
2016-06-01
DOI
10.7567/apex.9.071101

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