High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

(2015) Zongyang Hu et al.   APPLIED PHYSICS LETTERS

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

(2015) Ramya Yeluri et al.   APPLIED PHYSICS LETTERS

4-kV and 2.8- $\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents

(2015) I. C. Kizilyalli et al.   IEEE ELECTRON DEVICE LETTERS

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

(2014) Michael J. Uren et al.   APPLIED PHYSICS LETTERS

3.7 kV Vertical GaN PN Diodes

(2014) Isik C. Kizilyalli et al.   IEEE ELECTRON DEVICE LETTERS

1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

(2014) Hui Nie et al.   IEEE ELECTRON DEVICE LETTERS

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

(2014) Tomasz Sochacki et al.   JOURNAL OF CRYSTAL GROWTH

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

(2014) J. L. Lyons et al.   PHYSICAL REVIEW B

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

(2013) Yuhao Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

(2013) Y.-F. Wu et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

(2011) Rongming Chu et al.   IEEE ELECTRON DEVICE LETTERS

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

(2010) Yu Saitoh et al.   Applied Physics Express

Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

(2010) N.Y. Garces et al.   JOURNAL OF CRYSTAL GROWTH

Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy

(2009) C. L. Chao et al.   APPLIED PHYSICS LETTERS