Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

(2017) Michael Slomski et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3

(2017) Linpeng Dong et al.   Scientific Reports

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

(2016) Kelson D. Chabak et al.   APPLIED PHYSICS LETTERS

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

(2016) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air

(2016) K. Hoshikawa et al.   JOURNAL OF CRYSTAL GROWTH

Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulatingβ-Ga2O3single crystal along [100], [010] and [001]

(2016) M Handwerg et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

(2015) Toshiyuki Oishi et al.   Applied Physics Express

Lattice thermal conductivity in β-Ga2O3 from first principles

(2015) Marco D. Santia et al.   APPLIED PHYSICS LETTERS

Anisotropic thermal conductivity in single crystal β-gallium oxide

(2015) Zhi Guo et al.   APPLIED PHYSICS LETTERS

Temperature-dependent thermal conductivity in Mg-doped and undopedβ-Ga2O3bulk-crystals

(2015) M Handwerg et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

(2014) Zbigniew Galazka et al.   JOURNAL OF CRYSTAL GROWTH

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Analysis of the “3-Omega” method for substrates and thick films of anisotropic thermal conductivity

(2012) Ashok T. Ramu et al.   JOURNAL OF APPLIED PHYSICS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature

(2008) Encarnación G. Víllora et al.   APPLIED PHYSICS LETTERS