Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

Published 2017 View Full Article

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Title
Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 33, Issue 1, Pages 015013
Publisher
IOP Publishing
Online
2017-11-22
DOI
10.1088/1361-6641/aa9c4d

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