Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide

Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells

(2014) Yun Seog Lee et al.   ADVANCED MATERIALS

Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3

(2014) Armin Richter et al.   APPLIED PHYSICS LETTERS

Cu2O-based heterojunction solar cells with an Al-doped ZnO/oxide semiconductor/thermally oxidized Cu2O sheet structure

(2014) Tadatsugu Minami et al.   SOLAR ENERGY

Atomic Layer Deposition of Ga2O3 Films Using Trimethylgallium and Ozone

(2012) David J. Comstock et al.   CHEMISTRY OF MATERIALS

Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface

(2012) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma

(2012) Inci Donmez et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

(2012) Aravind Kumar Chandiran et al.   NANO LETTERS

Improved quantitative description of Auger recombination in crystalline silicon

(2012) Armin Richter et al.   PHYSICAL REVIEW B

Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon

(2009) Jonathon Mitchell et al.   APPLIED PHYSICS LETTERS

Disorder, band offsets and dopability of transparent conducting oxides

(2007) John Robertson   THIN SOLID FILMS

Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing

(2007) Shigeo Ohira et al.   THIN SOLID FILMS