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Title
Energy band offsets of dielectrics on InGaZnO4
Authors
Keywords
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Journal
Applied Physics Reviews
Volume 4, Issue 2, Pages 021301
Publisher
AIP Publishing
Online
2017-04-18
DOI
10.1063/1.4980153
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Note: Only part of the references are listed.- Corrigendum to “Amorphous semiconductor mobility limits” [J. Non-Cryst. Solids 432 (2016) 196–199]
- (2017) K.A. Stewart et al. JOURNAL OF NON-CRYSTALLINE SOLIDS
- Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure
- (2016) Po-Tsun Liu et al. APPLIED PHYSICS LETTERS
- Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors
- (2016) Asal Kiazadeh et al. APPLIED PHYSICS LETTERS
- Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors
- (2016) Saeroonter Oh et al. APPLIED PHYSICS LETTERS
- Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor
- (2016) C. Besleaga et al. APPLIED SURFACE SCIENCE
- Impact of Native Defects in the High Dielectric Constant Oxide HfSiO4on MOS Device Performance
- (2016) Hai-Kuan Dong et al. CHINESE PHYSICS LETTERS
- Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics
- (2016) C.Y. Zheng et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Multi-state extrapolation of UV/Vis absorption spectra with QM/QM hybrid methods
- (2016) Sijin Ren et al. JOURNAL OF CHEMICAL PHYSICS
- Device instability of amorphous InGaZnO thin film transistors with transparent source and drain
- (2016) Sang Min Kim et al. MICROELECTRONICS RELIABILITY
- Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain
- (2016) Jong Hoon Lee et al. MICROELECTRONICS RELIABILITY
- Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability
- (2016) Michael J. Mutch et al. MICROELECTRONICS RELIABILITY
- Analytical approximation of the InGaZnO thin-film transistors surface potential
- (2016) Luigi Colalongo SOLID-STATE ELECTRONICS
- Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates
- (2016) Sung Heo et al. SURFACE AND INTERFACE ANALYSIS
- Band alignment in ZrSiO 4 /ZnO heterojunctions
- (2016) David C. Hays et al. VACUUM
- Valence and Conduction Band Offsets in Sputtered LaAlO 3 /InGaZnO 4 Heterostructures
- (2016) David C. Hays et al. ECS Journal of Solid State Science and Technology
- Effect of Surface Defect States on Valence Band and Charge Separation and Transfer Efficiency
- (2016) Juan Xu et al. Scientific Reports
- A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiNx coupled junction
- (2015) Myung-Jea Choi et al. APPLIED PHYSICS LETTERS
- Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content
- (2015) Elizabeth A. Paisley et al. APPLIED PHYSICS LETTERS
- Publisher's Note: “Defect-induced bandgap narrowing in low-k dielectrics” [Appl. Phys. Lett. 107, 082903 (2015)]
- (2015) X. Guo et al. APPLIED PHYSICS LETTERS
- Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions
- (2015) Kazuhiro Tsutsui et al. APPLIED PHYSICS LETTERS
- High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor
- (2015) Chen-Yang Chung et al. APPLIED PHYSICS LETTERS
- The effect of annealing in forming gas on the a-IGZO thin film transistor performance and valence band cut-off of IGZO on SiNx
- (2015) Raj Kamal et al. CURRENT APPLIED PHYSICS
- Modification of band offsets of InGaZnO 4 /Si heterojunction through nitrogenation treatment
- (2015) X.F. Chen et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy
- (2015) G. He et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Characterization of negative bias-illumination-stress stability for transparent top-gate In-Ga-Zn-O thin-film transistors with variations in the incorporated oxygen content
- (2015) Kyeong-Ah Kim et al. JOURNAL OF APPLIED PHYSICS
- Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy
- (2015) Andreas Klein JOURNAL OF PHYSICS-CONDENSED MATTER
- IGZO thin film transistors with Al2O3 gate insulators fabricated at different temperatures
- (2015) Xingwei Ding et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- ZrSiO x /IGZO heterojunctions band offsets determined by X-ray photoelectron spectroscopy
- (2015) David C. Hays et al. VACUUM
- Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures
- (2015) David C. Hays et al. VACUUM
- Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz
- (2015) Jiawei Zhang et al. Nature Communications
- Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy
- (2015) Sung Heo et al. AIP Advances
- Impact of the Low Temperature Gate Dielectrics on Device Performance and Bias-Stress Stabilities of a-IGZO Thin-Film Transistors
- (2015) M. Nag et al. ECS Journal of Solid State Science and Technology
- Origin of the Alternative Current (AC-) Gate Bias Improving the NBIS Stability of IGZO TFTs
- (2015) M. P. Hung et al. ECS Solid State Letters
- Hysteresis of Transistor Characteristics of Amorphous IGZO TFTs Studied by Controlling Measurement Speed
- (2015) Y.-J. Chen et al. ECS Solid State Letters
- Optical properties and bandgap evolution of ALD HfSiOx films
- (2015) Wen Yang et al. Nanoscale Research Letters
- Probing deeper by hard x-ray photoelectron spectroscopy
- (2014) P. Risterucci et al. APPLIED PHYSICS LETTERS
- Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In-Ga–Zn-O Thin-Film Transistor
- (2014) Kay Domen et al. IEEE ELECTRON DEVICE LETTERS
- Improved Performance of Amorphous InGaZnO Thin-Film Transistor With $\hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric by Using La Incorporation
- (2014) L. X. Qian et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Comparison of High-$\kappa~{\rm Gd}_{2}{\rm O}_{3}$ and ${\rm GdTiO}_{3}~\alpha$-InGaZnO Thin-Film Transistors
- (2014) Tung-Ming Pan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
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- (2014) Kazumasa Makise et al. JOURNAL OF APPLIED PHYSICS
- Measurement of bandgap energies in low-k organosilicates
- (2014) M. T. Nichols et al. JOURNAL OF APPLIED PHYSICS
- Density of states of amorphous In-Ga-Zn-O from electrical and optical characterization
- (2014) Eric Kai-Hsiang Yu et al. JOURNAL OF APPLIED PHYSICS
- Positive-Bias Stress Test on Amorphous In–Ga–Zn–O Thin Film Transistor: Annealing-Temperature Dependence
- (2014) Kay Domen et al. Journal of Display Technology
- Band Offsets in YSZ/InGaZnO4 Heterostructure System
- (2014) J. K. Kim et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
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- (2014) Jong Cheon Park et al. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases
- (2014) L.X. Qian et al. MICROELECTRONICS RELIABILITY
- Intrinsic energy band alignment of functional oxides
- (2014) Shunyi Li et al. Physica Status Solidi-Rapid Research Letters
- Tuning the electronic and structural properties of WO3 nanocrystals by varying transition metal tungstate precursors
- (2014) Sara Rahimnejad et al. RSC Advances
- Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering
- (2014) Takaya Miyase et al. ECS Journal of Solid State Science and Technology
- Vapor-Induced Improvements in Field Effect Mobility of Transparent a-IGZO TFTs
- (2014) Mami N. Fujii et al. ECS Journal of Solid State Science and Technology
- Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing
- (2014) Byung Du Ahn et al. ECS Journal of Solid State Science and Technology
- High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
- (2013) Hung-Chi Wu et al. APPLIED PHYSICS LETTERS
- Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors
- (2013) Yuichiro Hanyu et al. APPLIED PHYSICS LETTERS
- An amorphous oxide semiconductor thin-film transistor route to oxide electronics
- (2013) John F. Wager et al. CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
- Detection of defect states in low-k dielectrics using reflection electron energy loss spectroscopy
- (2013) S.W. King et al. JOURNAL OF APPLIED PHYSICS
- Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
- (2013) Ville Miikkulainen et al. JOURNAL OF APPLIED PHYSICS
- Heterojunction band offsets and dipole formation at BaTiO3/SrTiO3 interfaces
- (2013) Snjezana Balaz et al. JOURNAL OF APPLIED PHYSICS
- Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy
- (2013) Benjamin L. French et al. JOURNAL OF MATERIALS RESEARCH
- Instability of light illumination stress on amorphous In-Ga-Zn-O thin-film transistors
- (2013) Suehye Park et al. Journal of the Society for Information Display
- Band offsets, Schottky barrier heights, and their effects on electronic devices
- (2013) John Robertson JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate
- (2013) Hsiao-Hsuan Hsu et al. SOLID-STATE ELECTRONICS
- Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO3Gate Dielectric Incorporation
- (2013) Z. W. Zheng et al. ECS Journal of Solid State Science and Technology
- Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
- (2012) E. Fortunato et al. ADVANCED MATERIALS
- Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices
- (2012) Xinwei Wang et al. APPLIED PHYSICS LETTERS
- Band offsets in HfO2/InGaZnO4 heterojunctions
- (2012) Hyun Cho et al. APPLIED PHYSICS LETTERS
- Band offsets in ZrO2/InGaZnO4 heterojunction
- (2012) Jianke Yao et al. APPLIED PHYSICS LETTERS
- Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy
- (2012) Zhang-Yi Xie et al. APPLIED PHYSICS LETTERS
- An Investigation of the Different Charge Trapping Mechanisms for SiNx and SiO2 Gate Insulator in a-IGZO TFTs
- (2012) Young Wook Lee et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Highly Reliable Depletion-Mode a-IGZO TFT Gate Driver Circuits for High-Frequency Display Applications Under Light Illumination
- (2012) Binn Kim et al. IEEE ELECTRON DEVICE LETTERS
- Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs
- (2012) Sang Ho Rha et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O
- (2012) Keisuke Ide et al. JOURNAL OF APPLIED PHYSICS
- Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy
- (2012) Kyeongmi Lee et al. JOURNAL OF APPLIED PHYSICS
- The Surface Chemistry of Atomic Layer Depositions of Solid Thin Films
- (2012) Francisco Zaera Journal of Physical Chemistry Letters
- A Study of the Surface Chemical Reactions on IGZO Thin Film in BCl3/Ar Inductively Coupled Plasma
- (2012) Young-Hee Joo et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Analyzing the effects of ambient dependence for InGaZnO TFTs under illuminated bias stress
- (2012) Te-Chih Chen et al. SURFACE & COATINGS TECHNOLOGY
- Reflection electron energy loss spectroscopy for ultrathin gate oxide materials
- (2012) Hye Chung Shin et al. SURFACE AND INTERFACE ANALYSIS
- Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy
- (2011) E. A. Douglas et al. APPLIED PHYSICS LETTERS
- Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals
- (2011) Mandar J. Gadre et al. APPLIED PHYSICS LETTERS
- Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
- (2011) Te-Chih Chen et al. APPLIED PHYSICS LETTERS
- Al2O3∕InGaZnO4 Heterojunction Band Offsets by X-Ray Photoelectron Spectroscopy
- (2011) Hyun Cho et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Review paper: Transparent amorphous oxide semiconductor thin film transistor
- (2011) Jang-Yeon Kwon et al. Electronic Materials Letters
- An Interactive Simulation Tool for Complex Multilayer Dielectric Devices
- (2011) R G Southwick et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy
- (2011) Jianke Yao et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Quantitative Calculation of Oxygen Incorporation in Sputtered IGZO Films and the Impact on Transistor Properties
- (2011) Seyeoul Kwon et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Limits to doping in oxides
- (2011) J. Robertson et al. PHYSICAL REVIEW B
- The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays
- (2011) Jae Kyeong Jeong SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
- (2011) Joon Seok Park et al. THIN SOLID FILMS
- Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with theoretical predictions by the electron affinity rule, charge neutrality levels, and the common anion rule
- (2011) Andreas Klein THIN SOLID FILMS
- n-Type Organic Semiconductors in Organic Electronics
- (2010) John E. Anthony et al. ADVANCED MATERIALS
- Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors
- (2010) Sang-Yun Sung et al. APPLIED PHYSICS LETTERS
- High-Performance a-IGZO Thin-Film Transistor Using $ \hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric
- (2010) C. J. Chiu et al. IEEE ELECTRON DEVICE LETTERS
- High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature
- (2010) Jae Sang Lee et al. IEEE ELECTRON DEVICE LETTERS
- Empirical Modeling and Extraction of Parasitic Resistance in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors
- (2010) Jun-Hyun Park et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy
- (2010) E. Bersch et al. JOURNAL OF APPLIED PHYSICS
- Measurement of optical constants of Si and SiO2 from reflection electron energy loss spectra using factor analysis method
- (2010) H. Jin et al. JOURNAL OF APPLIED PHYSICS
- Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)−(4×2)
- (2010) Jonathon B. Clemens et al. JOURNAL OF CHEMICAL PHYSICS
- Energy band alignment between Pb(Zr,Ti)O3and high and low work function conducting oxides—from hole to electron injection
- (2010) F Chen et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
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- (2009) Robert A. Street ADVANCED MATERIALS
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- (2009) Henning Sirringhaus ADVANCED MATERIALS
- Band structure and valence-band offset of HfO2 thin film on Si substrate from photoemission spectroscopy
- (2009) Tingting Tan et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Impact of oxide defects on band offset at GeO2/Ge interface
- (2009) M. Yang et al. APPLIED PHYSICS LETTERS
- Growth of homoepitaxial SrTiO3 thin films by molecular-beam epitaxy
- (2009) C. M. Brooks et al. APPLIED PHYSICS LETTERS
- Environmental stability of candidate dielectrics for GaN-based device applications
- (2009) A. M. Herrero et al. JOURNAL OF APPLIED PHYSICS
- In situspectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
- (2009) E Langereis et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Toward High-Performance Amorphous GIZO TFTs
- (2009) P. Barquinha et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors
- (2009) Young-Je Cho et al. THIN SOLID FILMS
- Double gate GaInZnO thin film transistors
- (2008) Hyuck Lim et al. APPLIED PHYSICS LETTERS
- Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
- (2008) Kenji Nomura et al. APPLIED PHYSICS LETTERS
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- (2008) Jae Kyeong Jeong et al. APPLIED PHYSICS LETTERS
- High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates
- (2008) Wantae Lim et al. APPLIED PHYSICS LETTERS
- Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors
- (2008) Hai Q. Chiang et al. JOURNAL OF NON-CRYSTALLINE SOLIDS
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- (2008) Kachirayil J. Saji et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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- (2008) Wantae Lim et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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- (2008) Arno Kaiser et al. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
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