Quasi-heteroepitaxial growth of β-Ga 2 O 3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy

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Title
Quasi-heteroepitaxial growth of β-Ga 2 O 3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy
Authors
Keywords
B1. Oxides, B2. Semiconducting gallium compounds, A3. Halide vapor phase epitaxy
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 410, Issue -, Pages 53-58
Publisher
Elsevier BV
Online
2014-10-28
DOI
10.1016/j.jcrysgro.2014.10.038

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