Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

Published 2015 View Full Article

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Title
Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 11, Pages 3658-3664
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-10-10
DOI
10.1109/ted.2015.2480756

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