Shallow donor state of hydrogen inIn2O3andSnO2: Implications for conductivity in transparent conducting oxides

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Rich Variety of Defects in ZnO via an Attractive Interaction between O Vacancies and Zn Interstitials: Origin ofn-Type Doping

(2009) Yong-Sung Kim et al.   PHYSICAL REVIEW LETTERS

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

(2008) T. D. Veal et al.   APPLIED PHYSICS LETTERS

Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS

Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

(2008) P. D. C. King et al.   PHYSICAL REVIEW LETTERS

Sources of Electrical Conductivity inSnO2

(2008) Abhishek Kumar Singh et al.   PHYSICAL REVIEW LETTERS