Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3

Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

(2016) Shihyun Ahn et al.   APPLIED PHYSICS LETTERS

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

(2016) Kelson D. Chabak et al.   APPLIED PHYSICS LETTERS

Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

(2016) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

(2016) Subrina Rafique et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

(2016) Andrew M. Armstrong et al.   JOURNAL OF APPLIED PHYSICS

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

(2016) Marko J. Tadjer et al.   JOURNAL OF ELECTRONIC MATERIALS

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

(2016) Janghyuk Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diodes at High Temperatures

(2016) Sooyeoun Oh et al.   ECS Journal of Solid State Science and Technology

Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

(2016) Marko J. Tadjer et al.   ECS Journal of Solid State Science and Technology

High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

(2015) Toshiyuki Oishi et al.   Applied Physics Express

High gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process

(2015) G. C. Hu et al.   OPTICS EXPRESS

Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors

(2015) Fei-Peng Yu et al.   Optical Materials Express

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes

(2014) Sukwon Kim et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology

(2014) Daoyou Guo et al.   Optical Materials Express

Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

(2013) Kohei Sasaki et al.   Applied Physics Express

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction

(2013) Shinji Nakagomi et al.   APPLIED PHYSICS LETTERS

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3thin films grown by pulsed laser deposition

(2013) Daniel Splith et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

(2012) M. Mohamed et al.   APPLIED PHYSICS LETTERS

Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer

(2011) Rikiya Suzuki et al.   APPLIED PHYSICS LETTERS

Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

(2011) Kenichiro Takakura et al.   PHYSICA B-CONDENSED MATTER

Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

(2008) Encarnación G. Víllora et al.   APPLIED PHYSICS LETTERS