High-level damage saturation below amorphisation in ion implanted β-Ga2O3

Published 2016 View Full Article

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Title
High-level damage saturation below amorphisation in ion implanted β-Ga2O3
Authors
Keywords
Ga, 2, O, 3, Ion implantation, Damage formation
Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 379, Issue -, Pages 85-90
Publisher
Elsevier BV
Online
2016-04-10
DOI
10.1016/j.nimb.2016.03.044

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