Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

(2015) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

(2015) Takeyoshi Onuma et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts

(2015) Winfried Mönch   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

(2014) Hisashi Murakami et al.   Applied Physics Express

Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

(2014) Kazushiro Nomura et al.   JOURNAL OF CRYSTAL GROWTH

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3

(2012) M. Mohamed et al.   APPLIED PHYSICS LETTERS

Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

(2010) Jun Suda et al.   Applied Physics Express

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

The electronic structure of β-Ga2O3

(2010) M. Mohamed et al.   APPLIED PHYSICS LETTERS