Thermal Stability of Implanted or Plasma Exposed Deuterium in Single Crystal Ga2O3

Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

(2016) Shihyun Ahn et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

(2016) Andrew M. Armstrong et al.   JOURNAL OF APPLIED PHYSICS

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

(2016) Marko J. Tadjer et al.   JOURNAL OF ELECTRONIC MATERIALS

Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

(2016) Janghyuk Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

(2016) Marko J. Tadjer et al.   ECS Journal of Solid State Science and Technology

Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

(2015) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Hydrogen centers and the conductivity ofIn2O3single crystals

(2015) Weikai Yin et al.   PHYSICAL REVIEW B

High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

(2014) Wan Sik Hwang et al.   APPLIED PHYSICS LETTERS

Behaviour of hydrogen in wide band gap oxides

(2014) H. Li et al.   JOURNAL OF APPLIED PHYSICS

Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

(2013) Kohei Sasaki et al.   Applied Physics Express

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation

(2013) Sunghwan Lee et al.   APPLIED PHYSICS LETTERS

$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

(2013) Kohei Sasaki et al.   IEEE ELECTRON DEVICE LETTERS

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Hydrogen in oxide semiconductors

(2012) Matthew D. McCluskey et al.   JOURNAL OF MATERIALS RESEARCH

Photoconductive Detection of Tetrahedrally Coordinated Hydrogen in ZnO

(2012) S. G. Koch et al.   PHYSICAL REVIEW LETTERS

Semiconducting oxides

(2011) Richard Catlow et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Conductivity in transparent oxide semiconductors

(2011) P D C King et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity

(2010) P. D. C. King et al.   APPLIED PHYSICS LETTERS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

The electronic structure of β-Ga2O3

(2010) M. Mohamed et al.   APPLIED PHYSICS LETTERS

Hydrogen donors inSnO2studied by infrared spectroscopy and first-principles calculations

(2010) W. M. Hlaing Oo et al.   PHYSICAL REVIEW B

Identification of two hydrogen donors in ZnO

(2009) E. V. Lavrov et al.   PHYSICAL REVIEW B

Shallow donor state of hydrogen inIn2O3andSnO2: Implications for conductivity in transparent conducting oxides

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Hydrogen doping in indium oxide: Anab initiostudy

(2009) Sukit Limpijumnong et al.   PHYSICAL REVIEW B