Electrical compensation by Ga vacancies in Ga2O3 thin films

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

(2014) Hisashi Murakami et al.   Applied Physics Express

On the bulk β-Ga2O3 single crystals grown by the Czochralski method

(2014) Zbigniew Galazka et al.   JOURNAL OF CRYSTAL GROWTH

Characterization of homoepitaxial β-Ga2O3 films prepared by metal–organic chemical vapor deposition

(2014) Xuejian Du et al.   JOURNAL OF CRYSTAL GROWTH

Compensating vacancy defects in Sn- and Mg-dopedIn2O3

(2014) E. Korhonen et al.   PHYSICAL REVIEW B

Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

(2013) Kohei Sasaki et al.   Applied Physics Express

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

(2013) D. Gogova et al.   JOURNAL OF CRYSTAL GROWTH

Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy

(2013) Guenter Wagner et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Defect identification in semiconductors with positron annihilation: Experiment and theory

(2013) Filip Tuomisto et al.   REVIEWS OF MODERN PHYSICS

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Hydrogenated cation vacancies in semiconducting oxides

(2011) J B Varley et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN

(2011) Christian Rauch et al.   PHYSICAL REVIEW B

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Czochralski growth and characterization of β-Ga2O3 single crystals

(2010) Z. Galazka et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

(2008) Encarnación G. Víllora et al.   APPLIED PHYSICS LETTERS

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS