Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition

Electrical compensation by Ga vacancies in Ga2O3 thin films

(2015) E. Korhonen et al.   APPLIED PHYSICS LETTERS

Quasi-heteroepitaxial growth of β-Ga 2 O 3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy

(2015) Yuichi Oshima et al.   JOURNAL OF CRYSTAL GROWTH

Wide bandgap engineering of (AlGa)2O3 films

(2014) Fabi Zhang et al.   APPLIED PHYSICS LETTERS

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

(2014) Benjamin E. Gaddy et al.   APPLIED PHYSICS LETTERS

Growth of corundum-structured (InxGa1−x)2O3 alloy thin films on sapphire substrates with buffer layers

(2014) Norihiro Suzuki et al.   JOURNAL OF CRYSTAL GROWTH

Growth characteristics and device properties of MOD derived β-Ga2O3 films

(2014) Pei Guo et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Wide bandgap engineering of (GaIn)2O3 films

(2014) Fabi Zhang et al.   SOLID STATE COMMUNICATIONS

Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

(2013) Kohei Sasaki et al.   Applied Physics Express

Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition

(2013) F.B. Zhang et al.   JOURNAL OF CRYSTAL GROWTH

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

(2013) D. Gogova et al.   JOURNAL OF CRYSTAL GROWTH

Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

(2013) Yi Cheng et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Control of the conductivity of Si-doped β-Ga2O3thin films via growth temperature and pressure

(2013) Stefan Müller et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ab initiocalculations on the defect structure ofβ-Ga2O3

(2013) T. Zacherle et al.   PHYSICAL REVIEW B

Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate

(2012) Shinji Nakagomi et al.   JOURNAL OF CRYSTAL GROWTH

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

(2011) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Hydrogenated cation vacancies in semiconducting oxides

(2011) J B Varley et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

(2011) Kenichiro Takakura et al.   PHYSICA B-CONDENSED MATTER

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Sol-gel prepared (Ga1−xInx)2O3 thin films for solar-blind ultraviolet photodetectors

(2010) Yoshihiro Kokubun et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

(2009) K. Takakura et al.   PHYSICA B-CONDENSED MATTER

Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

(2008) Encarnación G. Víllora et al.   APPLIED PHYSICS LETTERS

Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

(2008) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition

(2008) Daisuke Shinohara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS