Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3

Published 2017 View Full Article

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Title
Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 7, Pages 071101
Publisher
Japan Society of Applied Physics
Online
2017-06-14
DOI
10.7567/jjap.56.071101

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