Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects

Published 2017 View Full Article

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Title
Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 56, Issue 8, Pages 086501
Publisher
Japan Society of Applied Physics
Online
2017-06-30
DOI
10.7567/jjap.56.086501

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