A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Published 2015 View Full Article

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Title
A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film
Authors
Keywords
β, -Ga, 2, O, 3, thin film, ICP etching, SF, 6, Dry etching
Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 39, Issue -, Pages 582-586
Publisher
Elsevier BV
Online
2015-06-19
DOI
10.1016/j.mssp.2015.05.065

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