Beta-Gallium Oxide/SiC Heterojunction Diodes with High Rectification Ratios
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Title
Beta-Gallium Oxide/SiC Heterojunction Diodes with High Rectification Ratios
Authors
Keywords
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Journal
ECS Journal of Solid State Science and Technology
Volume 6, Issue 2, Pages Q3030-Q3035
Publisher
The Electrochemical Society
Online
2016-09-29
DOI
10.1149/2.0061702jss
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Note: Only part of the references are listed.- Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
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- Deep ultraviolet photodiodes based on the β-Ga2O3/GaN heterojunction
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- Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction
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- $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates
- (2013) Kohei Sasaki et al. IEEE ELECTRON DEVICE LETTERS
- MBE grown Ga2O3 and its power device applications
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- (2013) Shinji Nakagomi et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- (2012) Kohei Sasaki et al. Applied Physics Express
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
- (2012) Masataka Higashiwaki et al. APPLIED PHYSICS LETTERS
- Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3
- (2012) M. Mohamed et al. APPLIED PHYSICS LETTERS
- Current Transport Characteristics of Quasi-Al$_{x}$Ga$_{1-x}$N/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities
- (2012) Takafumi Okuda et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate
- (2012) Shinji Nakagomi et al. JOURNAL OF CRYSTAL GROWTH
- Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing
- (2009) Rikiya Suzuki et al. APPLIED PHYSICS LETTERS
- Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates
- (2008) Takayoshi Oshima et al. Applied Physics Express
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