First-principles calculations of the electronic structure and defects of Al2O3

Mechanism of dopant-vacancy association in α-quartz GeO2

(2013) H. Wang et al.   JOURNAL OF APPLIED PHYSICS

Analysis of metal insulator transitions in VO2 and V2O3 for RRAMs

(2013) Yuzheng Guo et al.   MICROELECTRONIC ENGINEERING

Interaction of oxygen vacancies in yttrium germanates

(2012) H. Wang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

(2011) J. R. Weber et al.   JOURNAL OF APPLIED PHYSICS

Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP

(2010) Xinhong Cheng et al.   APPLIED PHYSICS LETTERS

Screened exchange density functional applied to solids

(2010) Stewart J. Clark et al.   PHYSICAL REVIEW B

Oxygen vacancy levels and interfaces of Al2O3

(2009) D. Liu et al.   MICROELECTRONIC ENGINEERING

High-k dielectrics for future generation memory devices (Invited Paper)

(2009) J.A. Kittl et al.   MICROELECTRONIC ENGINEERING

Impact of Carbon Incorporation on the Effective Work Function of WN and TaN Metal Gate Electrodes

(2008) H. N. Alshareef et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS