Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Polarity of pulsed laser deposited ZnO nanostructures

(2016) Sven Käbisch et al.   APPLIED PHYSICS LETTERS

N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage

(2016) Xun Zheng et al.   IEEE ELECTRON DEVICE LETTERS

Inversion Domain Boundaries in GaN Wires Revealed by Coherent Bragg Imaging

(2015) Stéphane Labat et al.   ACS Nano

Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy

(2015) Pierre-Marie Coulon et al.   Applied Physics Express

Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

(2015) Kanako Shojiki et al.   Applied Physics Express

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

(2015) O. Romanyuk et al.   APPLIED PHYSICS LETTERS

Hierarchical ZnO Nanowire Growth with Tunable Orientations on Versatile Substrates Using Atomic Layer Deposition Seeding

(2015) Ashley R. Bielinski et al.   CHEMISTRY OF MATERIALS

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

(2015) Matt D. Brubaker et al.   CRYSTAL GROWTH & DESIGN

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

(2015) Diego Marti et al.   IEEE ELECTRON DEVICE LETTERS

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

(2015) Cheng Liu et al.   IEEE ELECTRON DEVICE LETTERS

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

(2015) Yan Tang et al.   IEEE ELECTRON DEVICE LETTERS

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

(2015) Shih-Wei Feng et al.   JOURNAL OF APPLIED PHYSICS

The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

(2015) Thomas Auzelle et al.   JOURNAL OF APPLIED PHYSICS

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

(2015) Bartosz Foltynski et al.   JOURNAL OF CRYSTAL GROWTH

Local Electronic Structures and Polarity of ZnO Nanorods Grown on GaN Substrates

(2015) Yen-Ju Wu et al.   Journal of Physical Chemistry C

Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy

(2015) Žarko Gačević et al.   NANO LETTERS

Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

(2015) A. Minj et al.   NANO LETTERS

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

(2015) M. Wölz et al.   NANO LETTERS

Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns

(2015) Katsumi Kishino et al.   NANOTECHNOLOGY

Aluminium- and gallium-doped homoepitaxial ZnO thin films: Strain-engineering and electrical performance

(2015) Michael Lorenz et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Pseudomorphic ZnO-based heterostructures: From polar through all semipolar to nonpolar orientations

(2015) Marius Grundmann et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Ab initio-based bulk and surface thermodynamics of InGaN alloys: Investigating the effects of strain and surface polarity

(2015) Andrew I. Duff et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN

(2015) Hong Li et al.   PHYSICAL REVIEW LETTERS

Nobel Lecture: Fascinated journeys into blue light

(2015) Isamu Akasaki   REVIEWS OF MODERN PHYSICS

Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization ofp-type GaN by Mg doping followed by low-energy electron beam irradiation

(2015) Hiroshi Amano   REVIEWS OF MODERN PHYSICS

Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

(2015) Shuji Nakamura   REVIEWS OF MODERN PHYSICS

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

(2015) Haoran Li et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates

(2015) Elaheh Ahmadi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Growth of a polarity controlled ZnO nanorod array on a glass/FTO substrate by chemical bath deposition

(2015) Neelam Rathore et al.   RSC Advances

p-GaN/n-ZnO Heterojunction Nanowires: Optoelectronic Properties and the Role of Interface Polarity

(2014) Fabian Schuster et al.   ACS Nano

Selective Area Growth of Well-Ordered ZnO Nanowire Arrays with Controllable Polarity

(2014) Vincent Consonni et al.   ACS Nano

Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy

(2014) Hironori Okumura et al.   APPLIED PHYSICS LETTERS

Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

(2014) Elaheh Ahmadi et al.   APPLIED PHYSICS LETTERS

Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors

(2014) Jing Lu et al.   APPLIED PHYSICS LETTERS

Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique

(2014) Byung Oh Jung et al.   CRYSTENGCOMM

High-$f_\rm MAX$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_\rm x$ Passivation

(2014) Sen Huang et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar $(000\bar{1})$ GaN/sapphire

(2014) Tomoyuki Tanikawa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effect ofc-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN

(2014) Kanako Shojiki et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Homoepitaxial growth of ZnO films with reduced impurity concentrations by helicon-wave-excited-plasma sputtering epitaxy using a crystalline ZnO target prepared by hydrothermal technique

(2014) Kentaro Furusawa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

(2014) Christopher T. Shelton et al.   JOURNAL OF APPLIED PHYSICS

Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces

(2014) O. Romanyuk et al.   JOURNAL OF APPLIED PHYSICS

Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al2O3 by plasma-assisted molecular beam epitaxy

(2014) Marta Sobanska et al.   JOURNAL OF APPLIED PHYSICS

Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

(2014) Stéphane Brochen et al.   JOURNAL OF APPLIED PHYSICS

Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

(2014) P. M. Coulon et al.   JOURNAL OF APPLIED PHYSICS

Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures

(2014) Jan Müßener et al.   NANO LETTERS

Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate

(2014) J Borysiuk et al.   NANOTECHNOLOGY

Enhancement-mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2plasma implantation

(2014) Kai Zhang et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Activity of ZnO polar surfaces: an insight from surface energies

(2014) Chunguang Tang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Effects of strain on the valence band structure and exciton-polariton energies in ZnO

(2014) Markus R. Wagner et al.   PHYSICAL REVIEW B

Influence of polarity and hydroxyl termination on the band bending at ZnO surfaces

(2014) R. Heinhold et al.   PHYSICAL REVIEW B

Understanding and controlling indium incorporation and surface segregation on InxGa1−xN surfaces: Anab initioapproach

(2014) Andrew Ian Duff et al.   PHYSICAL REVIEW B

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

(2014) J. L. Lyons et al.   PHYSICAL REVIEW B

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency

(2014) P. Corfdir et al.   PHYSICAL REVIEW B

Absolute surface energies of polar and nonpolar planes of GaN

(2014) C. E. Dreyer et al.   PHYSICAL REVIEW B

GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

(2014) Stephen W Kaun et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

(2014) Stacia Keller et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data

(2014) Paweł Kempisty et al.   AIP Advances

Challenges and opportunities of ZnO-related single crystalline heterostructures

(2014) Y. Kozuka et al.   Applied Physics Reviews

Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes

(2014) Kunook Chung et al.   APL Materials

Determination of Polarization-Fields Across Polytype Interfaces in InAs Nanopillars

(2013) Luying Li et al.   ADVANCED MATERIALS

Morphology Evolution of Pulsed-Flux Ga-Polar GaN Nanorod Growth by Metal Organic Vapor Phase Epitaxy and Its Nucleation Dependence

(2013) Si-Young Bae et al.   Applied Physics Express

Nucleus and Spiral Growth of N-face GaN(0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy

(2013) Chia-Hung Lin et al.   Applied Physics Express

Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition

(2013) Jing Lu et al.   APPLIED PHYSICS LETTERS

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

(2013) A. M. Hosalli et al.   APPLIED PHYSICS LETTERS

Opposite crystal polarities observed in spontaneous and vapour-liquid-solid grown ZnO nanowires

(2013) V. Sallet et al.   APPLIED PHYSICS LETTERS

GaN polarity determination by photoelectron diffraction

(2013) O. Romanyuk et al.   APPLIED PHYSICS LETTERS

Polarity driven morphology of zinc oxide nanostructures

(2013) S. Käbisch et al.   APPLIED PHYSICS LETTERS

Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires

(2013) L. Lymperakis et al.   APPLIED PHYSICS LETTERS

Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures

(2013) Baishakhi Mazumder et al.   APPLIED PHYSICS LETTERS

Polarity effects in the optical properties of hydrothermal ZnO

(2013) M. W. Allen et al.   APPLIED PHYSICS LETTERS

Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures

(2013) Xue Wang et al.   CRYSTAL GROWTH & DESIGN

Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

(2013) A. Soltani et al.   IEEE ELECTRON DEVICE LETTERS

An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors

(2013) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

Characteristics of N-Face InGaN Light-Emitting Diodes With p-Type InGaN/GaN Superlattice

(2013) Guofeng Yang et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

(2013) Fatih Akyol et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy

(2013) Sansaptak Dasgupta et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

(2013) Giovanni Verzellesi et al.   JOURNAL OF APPLIED PHYSICS

First-principles study of electronic structures and photocatalytic activity of low-Miller-index surfaces of ZnO

(2013) Haifeng Zhang et al.   JOURNAL OF APPLIED PHYSICS

Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy

(2013) C. Tessarek et al.   JOURNAL OF APPLIED PHYSICS

Adsorption of ammonia on hydrogen covered GaN(0001) surface – Density Functional Theory study

(2013) Paweł Kempisty et al.   JOURNAL OF CRYSTAL GROWTH

Semipolar $({\hbox{20}}\bar\hbox{2\bar\hbox{1)$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

(2013) Daniel F. Feezell et al.   Journal of Display Technology

Formation Mechanisms of ZnO Nanowires: The Crucial Role of Crystal Orientation and Polarity

(2013) Sophie Guillemin et al.   Journal of Physical Chemistry C

Degenerate interface layers in epitaxial scandium-doped ZnO thin films

(2013) Michael Lorenz et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy

(2013) Sergio Fernández-Garrido et al.   NANO LETTERS

Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes

(2013) Santino D. Carnevale et al.   NANO LETTERS

Polar surface effects on the thermal conductivity of ZnO nanowires: a shell-like surface reconstruction-induced preserving mechanism

(2013) Jin-Wu Jiang et al.   Nanoscale

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission

(2013) S Albert et al.   NANOTECHNOLOGY

Ga-polar GaN nanocolumn arrays with semipolar faceted tips

(2013) A Urban et al.   NEW JOURNAL OF PHYSICS

Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms

(2013) V. Consonni   Physica Status Solidi-Rapid Research Letters

Effect of surface reconstruction on the electronic structure of ZnO(0001)

(2013) Sougata Pal et al.   PHYSICAL REVIEW B

GaN(0001) surface states: Experimental and theoretical fingerprints to identify surface reconstructions

(2013) M. Himmerlich et al.   PHYSICAL REVIEW B

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

N-polar GaN epitaxy and high electron mobility transistors

(2013) Man Hoi Wong et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-performance N-polar GaN enhancement-mode device technology

(2013) Uttam Singisetti et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (0001¯) GaN

(2012) S. Keller et al.   APPLIED PHYSICS LETTERS

Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy

(2012) Soojeong Choi et al.   APPLIED PHYSICS LETTERS

Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants

(2012) Dongjin Won et al.   APPLIED PHYSICS LETTERS

Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

(2012) Yoshinobu Kawaguchi et al.   APPLIED PHYSICS LETTERS

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

(2012) F. Akyol et al.   APPLIED PHYSICS LETTERS

Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE

(2012) Xue Wang et al.   CRYSTAL GROWTH & DESIGN

N-Polar GaN Nanowires Seeded by Al Droplets on Si(111)

(2012) Ludovic Largeau et al.   CRYSTAL GROWTH & DESIGN

Multiwavelength anomalous diffraction and diffraction anomalous fine structure to study composition and strain of semiconductor nanostructures

(2012) V. Favre-Nicolin et al.   European Physical Journal-Special Topics

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

(2012) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS

150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

(2012) Diego Marti et al.   IEEE ELECTRON DEVICE LETTERS

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

(2012) Daniel J. Denninghoff et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

(2012) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Impact of oxygen source parameters on homoepitaxial ZnO films grown at low-temperature on Zn-polar substrates

(2012) M. Wei et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Polarization engineered 1-dimensional electron gas arrays

(2012) Digbijoy N. Nath et al.   JOURNAL OF APPLIED PHYSICS

Reconstructions and electronic structure of (112¯2) and (112¯2¯) semipolar AlN surfaces

(2012) E. Kalesaki et al.   JOURNAL OF APPLIED PHYSICS

Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

(2012) A. L. Corrion et al.   JOURNAL OF APPLIED PHYSICS

Morphology transitions in ZnO nanorods grown by MOCVD

(2012) D.N. Montenegro et al.   JOURNAL OF CRYSTAL GROWTH

Selective-area growth of thin GaN nanowires by MOCVD

(2012) Kihyun Choi et al.   JOURNAL OF CRYSTAL GROWTH

Critical Nucleation Effects on the Structural Relationship Between ZnO Seed Layer and Nanowires

(2012) Sophie Guillemin et al.   Journal of Physical Chemistry C

Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates

(2012) Jinsub Park et al.   MATERIALS RESEARCH BULLETIN

Self-Assembled GaN Nanowires on Diamond

(2012) Fabian Schuster et al.   NANO LETTERS

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

(2012) M. I. den Hertog et al.   NANO LETTERS

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

(2012) Maria de la Mata et al.   NANO LETTERS

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

(2012) Sergio Fernández-Garrido et al.   NANO LETTERS

InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays

(2012) Ting-Wei Yeh et al.   NANO LETTERS

Current path in light emitting diodes based on nanowire ensembles

(2012) F Limbach et al.   NANOTECHNOLOGY

Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire

(2012) G Perillat-Merceroz et al.   NANOTECHNOLOGY

Scaling thermodynamic model for the self-induced nucleation of GaN nanowires

(2012) Vladimir G. Dubrovskii et al.   PHYSICAL REVIEW B

Optical signatures of nitrogen acceptors in ZnO

(2012) S. Lautenschlaeger et al.   PHYSICAL REVIEW B

Direct experimental determination of the spontaneous polarization of GaN

(2012) Jonas Lähnemann et al.   PHYSICAL REVIEW B

Ab initio-based approach to reconstruction, adsorption and incorporation on GaN surfaces

(2012) T Ito et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Quantitative low-energy electron diffraction analysis of the GaN (1×1) reconstruction

(2012) O. Romanyuk et al.   SURFACE SCIENCE

Growth of N-polar GaN Using a CrN buffer layer on (0001) Al2O3 via plasma-assisted molecular beam epitaxy

(2012) Jinsub Park et al.   THIN SOLID FILMS

Stabilization Principles for Polar Surfaces of ZnO

(2011) Jeppe V. Lauritsen et al.   ACS Nano

Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

(2011) Sansaptak Dasgupta et al.   Applied Physics Express

Preparation of an Epitaxy-Ready Surface of a ZnO(0001) Substrate

(2011) Shunsuke Akasaka et al.   Applied Physics Express

Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al$_{2}$O$_{3}$ Deposited by Atomic Layer Deposition

(2011) Tetsuya Fujiwara et al.   Applied Physics Express

A comparative study of photoluminescence of Zn-polar and O-polar faces in single crystal ZnO using moment analysis

(2011) Aishi Yamamoto et al.   APPLIED PHYSICS LETTERS

Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy

(2011) X. J. Chen et al.   APPLIED PHYSICS LETTERS

N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

(2011) Jai Verma et al.   APPLIED PHYSICS LETTERS

Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

(2011) M. W. Allen et al.   APPLIED PHYSICS LETTERS

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

(2011) T. Gotschke et al.   APPLIED PHYSICS LETTERS

Effect of doping and polarization on carrier collection in InGaN quantum well solar cells

(2011) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer

(2011) Yun Yan Zhang et al.   APPLIED PHYSICS LETTERS

On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

(2011) B. Alloing et al.   APPLIED PHYSICS LETTERS

Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods

(2011) S. F. Li et al.   CRYSTAL GROWTH & DESIGN

Plasma-assisted MBE growth of GaN on Si(111) substrates

(2011) M. Sobanska et al.   CRYSTAL RESEARCH AND TECHNOLOGY

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

(2011) F. Medjdoub et al.   ELECTRONICS LETTERS

Thin-Body N-Face GaN Transistor Fabricated by Direct Wafer Bonding

(2011) Kevin K. Ryu et al.   IEEE ELECTRON DEVICE LETTERS

Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz

(2011) Stefano Tirelli et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/GaN HEMTs With AlGaN Back Barriers

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

(2011) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Numerical Study on the Influence of Piezoelectric Polarization on the Performance of p-on-n (0001)-Face GaN/InGaN p-i-n Solar Cells

(2011) Jih-Yuan Chang et al.   IEEE ELECTRON DEVICE LETTERS

Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology

(2011) Seshadri Kolluri et al.   IEEE ELECTRON DEVICE LETTERS

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

(2011) L. Geelhaar et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Improvement of Electron Mobility above 100,000 cm$^{2}$ V$^{-1}$ s$^{-1}$ in Mg$_{x}$Zn$_{1-x}$O/ZnO Heterostructures

(2011) Shunsuke Akasaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Position-controlled vertical arrays of single-crystalline ZnO nanowires on periodically polarity inverted templates

(2011) Jinsub Park et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

(2011) Matt D. Brubaker et al.   JOURNAL OF APPLIED PHYSICS

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

(2011) G. Jacopin et al.   JOURNAL OF APPLIED PHYSICS

Next-generation hydrothermal ZnO crystals

(2011) Dirk Ehrentraut et al.   JOURNAL OF CRYSTAL GROWTH

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

(2011) Rafael Mata et al.   JOURNAL OF CRYSTAL GROWTH

Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

(2011) A. Bengoechea-Encabo et al.   JOURNAL OF CRYSTAL GROWTH

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

(2011) A. Bengoechea-Encabo et al.   JOURNAL OF CRYSTAL GROWTH

Multilayer Assembly of Nanowire Arrays for Dye-Sensitized Solar Cells

(2011) Chengkun Xu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

(2011) Emanuele Uccelli et al.   NANO LETTERS

Nanoforest of Hydrothermally Grown Hierarchical ZnO Nanowires for a High Efficiency Dye-Sensitized Solar Cell

(2011) Seung Hwan Ko et al.   NANO LETTERS

Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns

(2011) X Kong et al.   NANOTECHNOLOGY

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer

(2011) T Schumann et al.   NANOTECHNOLOGY

Face-selective electrostatic control of hydrothermal zinc oxide nanowire synthesis

(2011) Jaebum Joo et al.   NATURE MATERIALS

Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

(2011) K. Pantzas et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Initiating polarity inversion in GaN growth using an AlN interlayer

(2011) Jennifer K. Hite et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations

(2011) M. V. Durnev et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

(2011) Karine Hestroffer et al.   PHYSICAL REVIEW B

Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers

(2011) M. R. Wagner et al.   PHYSICAL REVIEW B

Polarity determination of wurtzite-type crystals using hard x-ray photoelectron diffraction

(2011) Jesse R. Williams et al.   SURFACE SCIENCE

Polarity of heavily doped ZnO films grown on sapphire and SiO2 glass substrates by pulsed laser deposition

(2011) Yutaka Adachi et al.   THIN SOLID FILMS

Nucleation mechanisms and their influences on characteristics of ZnO nanorod arrays prepared by a hydrothermal method

(2010) Shih-Wei Chen et al.   ACTA MATERIALIA

Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

(2010) Kris A. Bertness et al.   ADVANCED FUNCTIONAL MATERIALS

Low Ohmic Contact Resistancem-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations

(2010) Tetsuya Fujiwara et al.   Applied Physics Express

Catalyst-Free Growth of Vertically Aligned ZnO Nanostructures Arrays on Periodically Polarity-Inverted Substrate

(2010) Jinsub Park et al.   Applied Physics Express

Molecular beam epitaxy of N-polar InGaN

(2010) Digbijoy N. Nath et al.   APPLIED PHYSICS LETTERS

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

(2010) S. Keller et al.   APPLIED PHYSICS LETTERS

Different growth rates for catalyst-induced and self-induced GaN nanowires

(2010) C. Chèze et al.   APPLIED PHYSICS LETTERS

Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

(2010) J. D. Wei et al.   APPLIED PHYSICS LETTERS

Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

(2010) X. J. Chen et al.   APPLIED PHYSICS LETTERS

Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

(2010) K. Nakahara et al.   APPLIED PHYSICS LETTERS

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

In SituX-ray Absorption Near-Edge Structure Spectroscopy of ZnO Nanowire Growth During Chemical Bath Deposition

(2010) Kevin M. McPeak et al.   CHEMISTRY OF MATERIALS

107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

(2010) S. Tirelli et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

(2010) M. Kanamura et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

(2010) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

(2010) Uttam Singisetti et al.   IEEE ELECTRON DEVICE LETTERS

GaN Nanowires Grown by Molecular Beam Epitaxy

(2010) Kris A. Bertness et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Nonpolar AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistors With a Normally Off Operation

(2010) Masayuki Kuroda et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

(2010) Eldad Bahat-Treidel et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optimization of the Growth Conditions for Molecular Beam Epitaxy of MgxZn1-xO (0≤x≤0.12) Films on Zn-Polar ZnO Substrates

(2010) Hiroyuki Yuji et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Defects at oxygen plasma cleaned ZnO polar surfaces

(2010) Yufeng Dong et al.   JOURNAL OF APPLIED PHYSICS

Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition

(2010) David F. Brown et al.   JOURNAL OF APPLIED PHYSICS

Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates

(2010) Seshadri Kolluri et al.   JOURNAL OF APPLIED PHYSICS

Polarity inversion of N-face GaN using an aluminum oxide interlayer

(2010) Man Hoi Wong et al.   JOURNAL OF APPLIED PHYSICS

Application-oriented nitride substrates: The key to long-wavelength nitride lasers beyond 500 nm

(2010) T. K. Sharma et al.   JOURNAL OF APPLIED PHYSICS

Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

(2010) Stefan Lautenschlaeger et al.   JOURNAL OF CRYSTAL GROWTH

Step-flow growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using ZnCl2 and H2O source gases

(2010) Rui Masuda et al.   JOURNAL OF CRYSTAL GROWTH

Stability of hydrogen on nonpolar and semipolar nitride surfaces: Role of surface orientation

(2010) Toru Akiyama et al.   JOURNAL OF CRYSTAL GROWTH

N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties

(2010) W. Bergbauer et al.   JOURNAL OF CRYSTAL GROWTH

GaN nanocolumns on sapphire by ammonia-MBE: From self-organized to site-controlled growth

(2010) S. Vézian et al.   JOURNAL OF CRYSTAL GROWTH

Collector Phase Transitions during Vapor−Solid−Solid Nucleation of GaN Nanowires

(2010) Caroline Chèze et al.   NANO LETTERS

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

(2010) Caroline Chèze et al.   Nano Research

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

(2010) W Bergbauer et al.   NANOTECHNOLOGY

Observation of the fractional quantum Hall effect in an oxide

(2010) A. Tsukazaki et al.   NATURE MATERIALS

Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

(2010) Yen-Kuang Kuo et al.   OPTICS LETTERS

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

(2010) H. Wang et al.   PHYSICA B-CONDENSED MATTER

Effects of polarization charge on the photovoltaic properties of InGaN solar cells

(2010) Z. Q. Li et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Direct evidence of metallicity atZnO (0001¯)−(1×1)surfaces from angle-resolved photoemission spectroscopy

(2010) L. F. J. Piper et al.   PHYSICAL REVIEW B

Optical spectra of ZnO in the far ultraviolet: First-principles calculations and ellipsometric measurements

(2010) Paola Gori et al.   PHYSICAL REVIEW B

Surface reconstruction and magnesium incorporation on semipolarGaN(11¯01)surfaces

(2010) Toru Akiyama et al.   PHYSICAL REVIEW B

Excited state properties of donor bound excitons in ZnO

(2010) Bruno K. Meyer et al.   PHYSICAL REVIEW B

Bulk transport measurements in ZnO: The effect of surface electron layers

(2010) M. W. Allen et al.   PHYSICAL REVIEW B

Hydrogen adsorption on polar ZnO(0001)-Zn: Extending equilibrium surface phase diagrams to kinetically stabilized structures

(2010) Markus Valtiner et al.   PHYSICAL REVIEW B

Nanostructure growth-induced defect formation and band bending at ZnO surfaces

(2010) T.A. Merz et al.   SURFACE SCIENCE

Effects of low temperature ZnO and MgO buffer thicknesses on properties of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy

(2010) Jae Goo Kim et al.   THIN SOLID FILMS

The thermal treatment effects of CrN buffer layer on crystal quality of Zn-polar ZnO films

(2010) Jinsub Park et al.   THIN SOLID FILMS

Dynamics of annular bright field imaging in scanning transmission electron microscopy

(2010) S.D. Findlay et al.   ULTRAMICROSCOPY

Surface Polarity Shielding and Hierarchical ZnO Nano-Architectures Produced Using Sequential Hydrothermal Crystal Synthesis and Thin Film Atomic Layer Deposition

(2009) Jeong-Seok Na et al.   ACS Nano

Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes

(2009) Yen-Kuang Kuo et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Enhancement-Modem-plane AlGaN/GaN Heterojunction Field-Effect Transistors

(2009) Tetsuya Fujiwara et al.   Applied Physics Express

Optical properties and carrier dynamics of polarity controlled ZnO films grown on (0001) Al2O3 by Cr-compound intermediate layers

(2009) Bong-Joon Kwon et al.   APPLIED PHYSICS LETTERS

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

(2009) S.-L. Sahonta et al.   APPLIED PHYSICS LETTERS

High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation

(2009) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy

(2009) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

(2009) David F. Brown et al.   APPLIED PHYSICS LETTERS

Development of enhancement mode AlN/GaN high electron mobility transistors

(2009) C. Y. Chang et al.   APPLIED PHYSICS LETTERS

A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurtzite GaN

(2009) W. S. Yan et al.   APPLIED PHYSICS LETTERS

GaN and InGaN(112̱2) surfaces: Group-III adlayers and indium incorporation

(2009) John E. Northrup   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

(2009) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

(2009) C. Ostermaier et al.   IEEE ELECTRON DEVICE LETTERS

Surface Reconstructions on GaN and InN Semipolar (11\bar22) Surfaces

(2009) Tomoki Yamashita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

(2009) Hisashi Masui et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy

(2009) Tsung-Yi Tang et al.   JOURNAL OF APPLIED PHYSICS

Defects in ZnO

(2009) M. D. McCluskey et al.   JOURNAL OF APPLIED PHYSICS

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

(2009) S. Fernández-Garrido et al.   JOURNAL OF APPLIED PHYSICS

N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

(2009) Qian Sun et al.   JOURNAL OF CRYSTAL GROWTH

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

Microstructures produced during the epitaxial growth of InGaN alloys

(2009) G.B. Stringfellow   JOURNAL OF CRYSTAL GROWTH

Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

(2009) A. Lajn et al.   JOURNAL OF ELECTRONIC MATERIALS

Growth of ZnO nanotube arrays and nanotube based piezoelectric nanogenerators

(2009) Yi Xi et al.   JOURNAL OF MATERIALS CHEMISTRY

Preferential Growth of Long ZnO Nanowire Array and Its Application in Dye-Sensitized Solar Cells

(2009) Chengkun Xu et al.   Journal of Physical Chemistry C

Formation of Hexagonal Pyramids and Pits on V-/VI-Polar and III-/II-Polar GaN/ZnO Surfaces by Wet Etching

(2009) Seung-Cheol Han et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Polarity-related asymetry at ZnO surfaces and metal interfaces

(2009) Yufeng Dong et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Polarity determination and control of SiC grown on Si

(2009) Jörg Pezoldt et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Highly Uniform Epitaxial ZnO Nanorod Arrays for Nanopiezotronics

(2009) J. Volk et al.   Nanoscale Research Letters

Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

(2009) Liverios Lymperakis et al.   PHYSICAL REVIEW B

Valence-band structure of the polar ZnO surfaces studied by angle-resolved photoelectron spectroscopy

(2009) K. Ozawa et al.   PHYSICAL REVIEW B

Atomic and electronic structure of the nonpolarGaN(11¯00)surface

(2009) M. Bertelli et al.   PHYSICAL REVIEW B

Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition

(2009) Markus R. Wagner et al.   PHYSICAL REVIEW B

Temperature Stabilized Surface Reconstructions at Polar ZnO(0001)

(2009) Markus Valtiner et al.   PHYSICAL REVIEW LETTERS

Surface Polarity and Shape-Controlled Synthesis of ZnO Nanostructures on GaN Thin Films Based on Catalyst-Free Metalorganic Vapor Phase Epitaxy

(2008) Taeseup Song et al.   ADVANCED MATERIALS

Plasma-assisted Molecular Beam Epitaxy of High Optical Quality MgZnO Films on Zn-polar ZnO Substrates

(2008) Yoshio Nishimoto et al.   Applied Physics Express

AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

(2008) Masataka Higashiwaki et al.   Applied Physics Express

Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns

(2008) Hiroto Sekiguchi et al.   Applied Physics Express

Comparative study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks

(2008) D. C. Oh et al.   APPLIED PHYSICS LETTERS

Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces

(2008) L. Ivanova et al.   APPLIED PHYSICS LETTERS

Polar face dependence of the ultrafast UV reflectivity of ZnO single crystal

(2008) J. R. Schneck et al.   APPLIED PHYSICS LETTERS

Defect reduction by epitaxial lateral overgrowth of nanorods in ZnO/(0001) sapphire films

(2008) D. Cherns et al.   APPLIED PHYSICS LETTERS

Application of channeling-enhanced electron energy-loss spectroscopy for polarity determination in ZnO nanopillars

(2008) J. Jasinski et al.   APPLIED PHYSICS LETTERS

Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

(2008) D. Cherns et al.   APPLIED PHYSICS LETTERS

Low residual doping level in homoepitaxially grown ZnO layers

(2008) I. C. Robin et al.   APPLIED PHYSICS LETTERS

Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

(2008) D. Cherns et al.   APPLIED PHYSICS LETTERS

Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

(2008) Yufeng Dong et al.   APPLIED PHYSICS LETTERS

Controlled synthesis of oriented single-crystal ZnO nanotube arrays on transparent conductive substrates

(2008) Guang-Wei She et al.   APPLIED PHYSICS LETTERS

Measuring local lattice polarity in AlN and GaN by high resolution Z-contrast imaging: The case of (0001) and (11¯00) GaN quantum dots

(2008) Jean-Luc Rouviere et al.   APPLIED PHYSICS LETTERS

Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy

(2008) K. Kishino et al.   ELECTRONICS LETTERS

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

(2008) Tom Zimmermann et al.   IEEE ELECTRON DEVICE LETTERS

High electron mobility of phosphorous-doped homoepitaxial ZnO thin films grown by pulsed-laser deposition

(2008) Matthias Brandt et al.   JOURNAL OF APPLIED PHYSICS

Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy

(2008) Man Hoi Wong et al.   JOURNAL OF APPLIED PHYSICS

Direct correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy

(2008) D. Takamizu et al.   JOURNAL OF APPLIED PHYSICS

Reduction of threading dislocations in ZnO/(0001) sapphire film heterostructure by epitaxial lateral overgrowth of nanorods

(2008) Yuekui Sun et al.   JOURNAL OF APPLIED PHYSICS

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS

Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS

Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition

(2008) David F. Brown et al.   JOURNAL OF APPLIED PHYSICS

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

(2008) M. Gonschorek et al.   JOURNAL OF APPLIED PHYSICS

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

(2008) Florian Furtmayr et al.   JOURNAL OF APPLIED PHYSICS

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

(2008) N.A. Fichtenbaum et al.   JOURNAL OF CRYSTAL GROWTH

Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

(2008) Katsumi Kishino et al.   JOURNAL OF CRYSTAL GROWTH

Electronic and Structural Properties of the (101̅0) and (112̅0) ZnO Surfaces

(2008) N. L. Marana et al.   JOURNAL OF PHYSICAL CHEMISTRY A

Growth of Oriented Zinc Oxide Nanowire Array into Novel Hierarchical Structures in Aqueous Solutions

(2008) Hongxing Li et al.   Journal of Physical Chemistry C

Ultrathin Seed-Layer for Tuning Density of ZnO Nanowire Arrays and Their Field Emission Characteristics

(2008) Jun Liu et al.   Journal of Physical Chemistry C

Investigation of ZnO nanopillars fabrication in a new Thomas Swan close coupled showerhead MOCVD reactor

(2008) A. Behrends et al.   MICROELECTRONICS JOURNAL

Ordered Arrays of ZnO Nanorods Grown on Periodically Polarity-Inverted Surfaces

(2008) Sang Hyun Lee et al.   NANO LETTERS

Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

(2008) Fang Qian et al.   NATURE MATERIALS

Nitrogen incorporation in homoepitaxial ZnO CVD epilayers

(2008) Stefan Lautenschlaeger et al.   Physica Status Solidi-Rapid Research Letters

Soft x-ray photoemission of clean and sulfur-covered polar ZnO surfaces: A view of the stabilization of polar oxide surfaces

(2008) Jayeeta Lahiri et al.   PHYSICAL REVIEW B

Stacking fault related3.31−eVluminescence at130−meVacceptors in zinc oxide

(2008) M. Schirra et al.   PHYSICAL REVIEW B

Asymmetry in the excitonic recombinations and impurity incorporation of the two polar faces of homoepitaxially grown ZnO films

(2008) S. Lautenschlaeger et al.   PHYSICAL REVIEW B

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE

Dislocation-Driven Nanowire Growth and Eshelby Twist

(2008) M. J. Bierman et al.   SCIENCE

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

(2008) V. N. Jmerik et al.   SEMICONDUCTORS

Interface and Wetting Layer Effect on the Catalyst-Free Nucleation and Growth of GaN Nanowires

(2008) Toma Stoica et al.   Small

Hydrothermal synthesis of ZnO nanorod arrays with the addition of polyethyleneimine

(2007) Ying Zhou et al.   MATERIALS RESEARCH BULLETIN