Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

Published 2012 View Full Article

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Title
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 6, Pages 785-787
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-04-17
DOI
10.1109/led.2012.2191134
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