An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors

Published 2013 View Full Article

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Title
An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 3, Pages 369-371
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2013-01-25
DOI
10.1109/led.2012.2237374

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