Homoepitaxial growth of ZnO films with reduced impurity concentrations by helicon-wave-excited-plasma sputtering epitaxy using a crystalline ZnO target prepared by hydrothermal technique

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Title
Homoepitaxial growth of ZnO films with reduced impurity concentrations by helicon-wave-excited-plasma sputtering epitaxy using a crystalline ZnO target prepared by hydrothermal technique
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 10, Pages 100301
Publisher
Japan Society of Applied Physics
Online
2014-09-12
DOI
10.7567/jjap.53.100301

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