InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

(2012) Guowang Li et al.   IEEE ELECTRON DEVICE LETTERS

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

(2012) Jia Guo et al.   IEEE ELECTRON DEVICE LETTERS

Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors

(2011) Ronghua Wang et al.   Applied Physics Express

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz

(2011) Stefano Tirelli et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current Ratio

(2011) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

(2011) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

(2011) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

(2011) Jia Guo et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

(2010) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

(2010) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

205-GHz (Al,In)N/GaN HEMTs

(2010) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS