Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

(2013) Fatih Akyol et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate

(2013) Shih-Wei Feng et al.   JOURNAL OF APPLIED PHYSICS

Molecular beam epitaxy of N-polar InGaN

(2010) Digbijoy N. Nath et al.   APPLIED PHYSICS LETTERS

Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells

(2010) Shih-Wei Feng et al.   JOURNAL OF APPLIED PHYSICS

Electrical and luminescent properties and deep traps spectra of N-polar GaN films

(2009) A.Y. Polyakov et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Nitrogen-polar GaN growth evolution on c-plane sapphire

(2008) Q. Sun et al.   APPLIED PHYSICS LETTERS

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

(2008) N.A. Fichtenbaum et al.   JOURNAL OF CRYSTAL GROWTH