Nonpolar AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistors With a Normally Off Operation

Published 2010 View Full Article

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Title
Nonpolar AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistors With a Normally Off Operation
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 2, Pages 368-372
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-01-13
DOI
10.1109/ted.2009.2037458

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