Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition

(2010) Dongjin Won et al.   JOURNAL OF APPLIED PHYSICS

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

(2009) David F. Brown et al.   APPLIED PHYSICS LETTERS

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

Electrical and luminescent properties and deep traps spectra of N-polar GaN films

(2009) A.Y. Polyakov et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition

(2008) David F. Brown et al.   JOURNAL OF APPLIED PHYSICS

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

(2008) N.A. Fichtenbaum et al.   JOURNAL OF CRYSTAL GROWTH