Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

Published 2009 View Full Article

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Title
Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 15, Pages 153506
Publisher
AIP Publishing
Online
2009-04-18
DOI
10.1063/1.3122347
References
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