N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage

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Title
N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 1, Pages 77-80
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-11-21
DOI
10.1109/led.2015.2502253

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