Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

(2012) Yuh-Renn Wu et al.   APPLIED PHYSICS LETTERS

Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

(2012) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Numerical analysis of indirect Auger transitions in InGaN

(2012) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

(2012) S. Hammersley et al.   JOURNAL OF APPLIED PHYSICS

Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors

(2012) F Gütle et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding

(2012) Ya Ya Kudryk et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes

(2011) Lei Wang et al.   OPTICS EXPRESS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

(2010) Hongping Zhao et al.   SOLID-STATE ELECTRONICS

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

(2009) Jiuru Xu et al.   APPLIED PHYSICS LETTERS