Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

(2013) Unhi Honda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

(2013) M. Himmerlich et al.   JOURNAL OF APPLIED PHYSICS

Dual behavior of excess electrons in rutile TiO2

(2013) A. Janotti et al.   Physica Status Solidi-Rapid Research Letters

Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes

(2013) D. O. Demchenko et al.   PHYSICAL REVIEW LETTERS

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

(2012) Toru Nagashima et al.   Applied Physics Express

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

(2012) Stephen W. Kaun et al.   APPLIED PHYSICS LETTERS

On the origin of the 265 nm absorption band in AlN bulk crystals

(2012) Ramón Collazo et al.   APPLIED PHYSICS LETTERS

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

(2012) Audrius Alkauskas et al.   PHYSICAL REVIEW LETTERS

DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN

(2012) P.B. Shah et al.   SOLID-STATE ELECTRONICS

Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors

(2010) G. Meneghesso et al.   APPLIED PHYSICS LETTERS

Group-II acceptors in wurtzite AlN: A screened hybrid density functional study

(2010) Áron Szabó et al.   APPLIED PHYSICS LETTERS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Electrostatic interactions between charged defects in supercells

(2010) Christoph Freysoldt et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Defect levels through hybrid density functionals: Insights and applications

(2010) Audrius Alkauskas et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy

(2009) Barbara Bastek et al.   APPLIED PHYSICS LETTERS

Why nitrogen cannot lead to p-type conductivity in ZnO

(2009) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Defect complexes and cluster doping of InN: First-principles investigations

(2009) X. M. Duan et al.   PHYSICAL REVIEW B

Role of Si and Ge as impurities in ZnO

(2009) J. L. Lyons et al.   PHYSICAL REVIEW B

FullyAb InitioFinite-Size Corrections for Charged-Defect Supercell Calculations

(2009) Christoph Freysoldt et al.   PHYSICAL REVIEW LETTERS