Effect ofc-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN

Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

(2013) Hideo Aida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Stability of hydrogen on nonpolar and semipolar nitride surfaces: Role of surface orientation

(2010) Toru Akiyama et al.   JOURNAL OF CRYSTAL GROWTH

Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

(2010) M. Leszczynski et al.   JOURNAL OF CRYSTAL GROWTH

Tilt of InGaN layers on miscut GaN substrates

(2010) M. Kryśko et al.   Physica Status Solidi-Rapid Research Letters

Microstructures produced during the epitaxial growth of InGaN alloys

(2009) G.B. Stringfellow   JOURNAL OF CRYSTAL GROWTH

Nitride-based quantum structures and devices on modified GaN substrates

(2009) Piotr Perlin et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Impact of hydrogen on indium incorporation atm-plane andc-planeIn0.25Ga0.75Nsurfaces: First-principles calculations

(2009) John E. Northrup   PHYSICAL REVIEW B

VESTA: a three-dimensional visualization system for electronic and structural analysis

(2008) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures

(2008) S. Keller et al.   JOURNAL OF APPLIED PHYSICS