Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz

245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

Schottky Barrier Height Inhomogeneity-Induced Deviation From Near-Ideal Pd/InAlN Schottky Contact

(2011) Z T Chen et al.   IEEE ELECTRON DEVICE LETTERS

Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation

(2011) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon withFT= 143 GHz

(2010) Haifeng Sun et al.   Applied Physics Express

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With ${F}_{ \rm T} = \hbox{144}\ \hbox{GHz}$

(2010) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

205-GHz (Al,In)N/GaN HEMTs

(2010) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of Trap States in AlInN/AlN/GaN Heterostructures by Frequency-Dependent Admittance Analysis

(2010) Engin Arslan et al.   JOURNAL OF ELECTRONIC MATERIALS

Evaluation of GaN HEMT degradation by means of pulsed I–V, leakage and DLTS measurements

(2009) A. Chini et al.   ELECTRONICS LETTERS

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

(2009) J. Kuzmik et al.   JOURNAL OF APPLIED PHYSICS

Physical degradation of GaN HEMT devices under high drain bias reliability testing

(2009) S.Y. Park et al.   MICROELECTRONICS RELIABILITY

Barrier-Layer Scaling of InAlN/GaN HEMTs

(2008) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS