Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

Suppression of Auger-stimulated efficiency droop in nitride-based light emitting diodes

(2013) R. Vaxenburg et al.   APPLIED PHYSICS LETTERS

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

(2013) S. Albert et al.   APPLIED PHYSICS LETTERS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Optimal number of quantum wells for blue InGaN/GaN light-emitting diodes

(2012) Chang Sheng Xia et al.   APPLIED PHYSICS LETTERS

The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

(2012) Roy B. Chung et al.   APPLIED PHYSICS LETTERS

Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities

(2012) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes

(2012) Byung-Jun Ahn et al.   APPLIED PHYSICS LETTERS

Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

(2012) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

(2012) Dong-Soo Shin et al.   APPLIED PHYSICS LETTERS

Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

(2012) Michael J. Cich et al.   APPLIED PHYSICS LETTERS

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

(2012) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Advantages of blue InGaN light-emitting diodes with InGaN-AlGaN-InGaN barriers

(2012) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

(2012) Taiping Lu et al.   APPLIED PHYSICS LETTERS

Numerical analysis of indirect Auger transitions in InGaN

(2012) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

(2012) B. Galler et al.   APPLIED PHYSICS LETTERS

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

(2012) F. Akyol et al.   APPLIED PHYSICS LETTERS

Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer

(2012) Yun-Yan Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes

(2012) Davide Saguatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling

(2012) D. A. Zakheim et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes

(2012) Dario Schiavon et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

(2011) Yuji Zhao et al.   Applied Physics Express

Theoretical study of polarization-doped GaN-based light-emitting diodes

(2011) L. Zhang et al.   APPLIED PHYSICS LETTERS

Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier

(2011) Chang Sheng Xia et al.   APPLIED PHYSICS LETTERS

Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition

(2011) L. Zhang et al.   APPLIED PHYSICS LETTERS

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

(2011) Qi Dai et al.   APPLIED PHYSICS LETTERS

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer

(2011) Yun Yan Zhang et al.   APPLIED PHYSICS LETTERS

Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers

(2011) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Auger recombination in GaInN/GaN quantum well laser structures

(2011) M. Brendel et al.   APPLIED PHYSICS LETTERS

Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier

(2011) Po-Min Tu et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

(2011) C. H. Wang et al.   APPLIED PHYSICS LETTERS

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

(2011) Yi-Keng Fu et al.   APPLIED PHYSICS LETTERS

Droop improvement in high current range on PSS-LEDs

(2011) S. Tanaka et al.   ELECTRONICS LETTERS

Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs

(2011) Chi-Kang Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improvement of Performance in p-Side Down InGaN/GaN Light-Emitting Diodes with Graded Electron Blocking Layer

(2011) Zhiqiang Li et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Recombination coefficients of GaN-based laser diodes

(2011) W. G. Scheibenzuber et al.   JOURNAL OF APPLIED PHYSICS

Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency

(2011) Weng W. Chow   OPTICS EXPRESS

Second-order piezoelectricity in wurtzite III-N semiconductors

(2011) Joydeep Pal et al.   PHYSICAL REVIEW B

Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer

(2010) S. P. Chang et al.   APPLIED PHYSICS LETTERS

A numerical study of Auger recombination in bulk InGaN

(2010) Francesco Bertazzi et al.   APPLIED PHYSICS LETTERS

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

(2010) Suk Choi et al.   APPLIED PHYSICS LETTERS

Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes

(2010) V. K. Malyutenko et al.   APPLIED PHYSICS LETTERS

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

(2010) Shih-Chun Ling et al.   APPLIED PHYSICS LETTERS

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

(2010) N. I. Bochkareva et al.   APPLIED PHYSICS LETTERS

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

(2010) X. Ni et al.   APPLIED PHYSICS LETTERS

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes

(2010) Yen-Kuang Kuo et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

(2010) X. Ni et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures

(2010) J. Simon et al.   SCIENCE

On carrier spillover in c- and m-plane InGaN light emitting diodes

(2009) J. Lee et al.   APPLIED PHYSICS LETTERS

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

(2009) X. Li et al.   APPLIED PHYSICS LETTERS

Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers

(2009) Hun Jae Chung et al.   APPLIED PHYSICS LETTERS

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

(2009) Jiuru Xu et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Reduced nonthermal rollover of wide-well GaInN light-emitting diodes

(2009) Markus Maier et al.   APPLIED PHYSICS LETTERS

Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

(2009) M. Zhang et al.   APPLIED PHYSICS LETTERS

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

(2009) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Design Criteria for Near-Ultraviolet GaN-Based Light-Emitting Diodes

(2009) Simone Chiaria et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

(2009) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

On the origin of efficiency roll-off in InGaN-based light-emitting diodes

(2008) X. A. Cao et al.   JOURNAL OF APPLIED PHYSICS