Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al$_{2}$O$_{3}$ Deposited by Atomic Layer Deposition

Nonpolara-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate

(2011) Yasuhiro Isobe et al.   Applied Physics Express

Low Ohmic Contact Resistancem-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations

(2010) Tetsuya Fujiwara et al.   Applied Physics Express

Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering

(2010) Guowang Li et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

(2010) M. Kanamura et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Modem-plane AlGaN/GaN Heterojunction Field-Effect Transistors

(2009) Tetsuya Fujiwara et al.   Applied Physics Express

Si Delta-Dopedm-Plane AlGaN/GaN Heterojunction Field-Effect Transistors

(2009) Tetsuya Fujiwara et al.   Applied Physics Express

Development of enhancement mode AlN/GaN high electron mobility transistors

(2009) C. Y. Chang et al.   APPLIED PHYSICS LETTERS

Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface

(2009) B. L. Swenson et al.   JOURNAL OF APPLIED PHYSICS

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

(2008) Tohru Oka et al.   IEEE ELECTRON DEVICE LETTERS

Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure

(2008) Kimihito Ooyama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS