Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy

(2012) J.R. Lang et al.   JOURNAL OF CRYSTAL GROWTH

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

(2011) J. R. Lang et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy

(2011) Ajay Raman et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

(2010) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

(2008) A. L. Corrion et al.   JOURNAL OF APPLIED PHYSICS

Kinetic energy barriers on the GaN(0001) surface: A nucleation study by scanning tunneling microscopy

(2008) Hao Zheng et al.   PHYSICAL REVIEW B