94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

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Title
94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 1, Pages 17-19
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-11-05
DOI
10.1109/led.2014.2367093

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