Plasma-assisted MBE growth of GaN on Si(111) substrates

The influence of substrate etched on the quality of GaN epilayers

(2011) Junping Mei et al.   APPLIED SURFACE SCIENCE

Electrical properties of GaN grown on a-plane GaN template by plasma-assisted molecular beam epitaxy

(2011) Jongmin Kim et al.   JOURNAL OF CRYSTAL GROWTH

Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates

(2010) R.M. Kemper et al.   JOURNAL OF CRYSTAL GROWTH

Effects of SiC buffer layer growth temperature on the residual strain of GaN/SiC/Si thin films

(2010) Jang-Ho Park et al.   MATERIALS LETTERS

AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

(2009) A. Le Louarn et al.   JOURNAL OF CRYSTAL GROWTH

Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE

(2008) A. Adikimenakis et al.   JOURNAL OF CRYSTAL GROWTH