Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 12, Pages 121902
Publisher
AIP Publishing
Online
2008-03-25
DOI
10.1063/1.2899944
References
View 1 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.