Enhancement-mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2plasma implantation

Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

(2014) Jie-Jie Zhu et al.   APPLIED PHYSICS LETTERS

Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy

(2013) T. L. Duan et al.   APPLIED PHYSICS LETTERS

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

(2013) Ye Wang et al.   IEEE ELECTRON DEVICE LETTERS

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

(2013) Zhikai Tang et al.   IEEE ELECTRON DEVICE LETTERS

Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate

(2013) Jae-Hoon Lee et al.   IEEE ELECTRON DEVICE LETTERS

Efficient and Accurate Schematic Transistor Model of FinFET Parasitic Elements

(2013) Ning Lu et al.   IEEE ELECTRON DEVICE LETTERS

Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

(2013) Shu Yang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

(2013) Kai Zhang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer

(2013) Takashi Mizutani et al.   JOURNAL OF APPLIED PHYSICS

Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors

(2012) Hsien-Chin Chiu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

(2011) Herwig Hahn et al.   Applied Physics Express

Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N2O plasma oxidation technology

(2011) Hsien-Chin Chiu et al.   APPLIED PHYSICS LETTERS

Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates

(2011) Mu-Tao Chu et al.   IEEE ELECTRON DEVICE LETTERS

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

(2011) Ronghua Wang et al.   IEEE ELECTRON DEVICE LETTERS

Low Ohmic Contact Resistancem-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations

(2010) Tetsuya Fujiwara et al.   Applied Physics Express

Novel E-Mode GaN-on-Si MOSHEMT Using a Selective Thermal Oxidation

(2010) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

(2010) F. Medjdoub et al.   IEEE ELECTRON DEVICE LETTERS

Development of enhancement mode AlN/GaN high electron mobility transistors

(2009) C. Y. Chang et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

(2008) Tohru Oka et al.   IEEE ELECTRON DEVICE LETTERS