Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data

Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces

(2014) Stanisław Krukowski et al.   JOURNAL OF APPLIED PHYSICS

General aspects of the vapor growth of semiconductor crystals – A study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient

(2014) Paweł Kempisty et al.   JOURNAL OF CRYSTAL GROWTH

Advances and new directions in gas-sensing devices

(2013) Il-Doo Kim et al.   ACTA MATERIALIA

Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

(2013) R. Kudrawiec et al.   APPLIED PHYSICS LETTERS

Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models

(2013) Stanisław Krukowski et al.   JOURNAL OF APPLIED PHYSICS

Fermi level influence on the adsorption at semiconductor surfaces—ab initio simulations

(2013) Stanisław Krukowski et al.   JOURNAL OF APPLIED PHYSICS

Density Functional Study of the First Wetting Layer on the GaN (0001) Surface

(2013) Yun-Wen Chen et al.   Journal of Physical Chemistry C

Highly sensitive and selective gas sensors using p-type oxide semiconductors: Overview

(2013) Hyo-Joong Kim et al.   SENSORS AND ACTUATORS B-CHEMICAL

Electronic properties on GaN(0001) surface – ab initio investigation

(2013) Maria Ptasinska et al.   VACUUM

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

(2012) R. Kudrawiec et al.   APPLIED PHYSICS LETTERS

Erratum: “Ab initio studies of electronic properties of bare GaN(0001) surface” [J. Appl. Phys. 106, 054901 (2009)]

(2012) Pawel Kempisty et al.   JOURNAL OF APPLIED PHYSICS

On the nature of Surface States Stark Effect at clean GaN(0001) surface

(2012) Paweł Kempisty et al.   JOURNAL OF APPLIED PHYSICS

Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface

(2012) Paweł Kempisty et al.   JOURNAL OF CRYSTAL GROWTH

Ab initio-based approach to reconstruction, adsorption and incorporation on GaN surfaces

(2012) T Ito et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Erratum to “Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface — Existence of the Surface States Stark Effect (SSSE)” [Surf. Sci. 605 (2011) 695-713]

(2011) Pawel Kempisty et al.   SURFACE SCIENCE

A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(000 \bar{1} ) clean surfaces: significance of the surface Stark effect

(2010) Jakub Sołtys et al.   NEW JOURNAL OF PHYSICS

Electronic structure of GaN and Ga investigated by soft x-ray spectroscopy and first-principles methods

(2010) Martin Magnuson et al.   PHYSICAL REVIEW B

Photoadsorption and photodesorption for GaN

(2009) M. Foussekis et al.   APPLIED PHYSICS LETTERS

Electrostatic condition for the termination of the opposite face of the slab in density functional theory simulations of semiconductor surfaces

(2009) Stanisław Krukowski et al.   JOURNAL OF APPLIED PHYSICS

Crystal growth of GaN on (0001) face by HVPE: Ab initio simulations

(2007) Paweł Kempisty et al.   JOURNAL OF CRYSTAL GROWTH