Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces

(2014) O. Romanyuk et al.   JOURNAL OF APPLIED PHYSICS

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence

(2014) S Fernández-Garrido et al.   NANOTECHNOLOGY

GaN polarity determination by photoelectron diffraction

(2013) O. Romanyuk et al.   APPLIED PHYSICS LETTERS

Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam Epitaxy

(2013) Sergio Fernández-Garrido et al.   NANO LETTERS

Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes

(2013) Santino D. Carnevale et al.   NANO LETTERS

Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms

(2013) V. Consonni   Physica Status Solidi-Rapid Research Letters

N-Polar GaN Nanowires Seeded by Al Droplets on Si(111)

(2012) Ludovic Largeau et al.   CRYSTAL GROWTH & DESIGN

Self-Assembled GaN Nanowires on Diamond

(2012) Fabian Schuster et al.   NANO LETTERS

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

(2012) M. I. den Hertog et al.   NANO LETTERS

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

(2012) Maria de la Mata et al.   NANO LETTERS

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

(2012) Sergio Fernández-Garrido et al.   NANO LETTERS

Quantitative low-energy electron diffraction analysis of the GaN (1×1) reconstruction

(2012) O. Romanyuk et al.   SURFACE SCIENCE

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

(2011) L. Geelhaar et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

(2011) Matt D. Brubaker et al.   JOURNAL OF APPLIED PHYSICS

Macro- and micro-strain in GaN nanowires on Si(111)

(2011) B Jenichen et al.   NANOTECHNOLOGY

Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns

(2011) X Kong et al.   NANOTECHNOLOGY

Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)

(2011) Karine Hestroffer et al.   PHYSICAL REVIEW B

GaN Nanowires Grown by Molecular Beam Epitaxy

(2010) Kris A. Bertness et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

(2010) Wei Guo et al.   NANO LETTERS

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

(2010) Caroline Chèze et al.   Nano Research

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

(2009) S. Fernández-Garrido et al.   JOURNAL OF APPLIED PHYSICS

Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

(2008) D. Cherns et al.   APPLIED PHYSICS LETTERS

Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

(2008) D. Cherns et al.   APPLIED PHYSICS LETTERS

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

(2008) Florian Furtmayr et al.   JOURNAL OF APPLIED PHYSICS