Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

Authors

Keywords

Journal

Volume 31, Issue 3, Pages 189-191

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2010-02-16

DOI

10.1109/led.2009.2039026

References

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