Application-oriented nitride substrates: The key to long-wavelength nitride lasers beyond 500 nm

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

(2011) Ferdinand Scholz et al.   MRS BULLETIN

Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

(2011) Mitsuru Funato et al.   MRS BULLETIN

Nonpolar/Semipolar GaN Technology for Violet, Blue, and Green Laser Diodes

(2011) Hiroaki Ohta et al.   MRS BULLETIN

Current Status of GaN-Based Solid-State Lighting

(2011) Shuji Nakamura   MRS BULLETIN

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

(2011) Daniel F. Feezell et al.   MRS BULLETIN

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

(2009) Yusuke Yoshizumi et al.   Applied Physics Express

Blue-Green InGaN/GaN Laser Diodes on Miscutm-Plane GaN Substrate

(2009) You-Da Lin et al.   Applied Physics Express

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

(2009) Takashi Miyoshi et al.   Applied Physics Express

Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm

(2009) Kuniyoshi Okamoto et al.   APPLIED PHYSICS LETTERS

500 nm electrically driven InGaN based laser diodes

(2009) Désirée Queren et al.   APPLIED PHYSICS LETTERS

InGaN laser diodes with 50 mW output power emitting at 515 nm

(2009) Adrian Avramescu et al.   APPLIED PHYSICS LETTERS

GaN Substrates—Progress, Status, and Prospects

(2009) T. Paskova et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

A method for evaluating the ground state excitonic band gaps of strained InxGa1−xN/GaN quantum wells

(2009) T. K. Sharma et al.   JOURNAL OF APPLIED PHYSICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Characterization of GaInN/GaN layers for green emitting laser diodes

(2009) C. Wetzel et al.   JOURNAL OF CRYSTAL GROWTH

Bulk GaN crystals grown by HVPE

(2009) Kenji Fujito et al.   JOURNAL OF CRYSTAL GROWTH

Optical, structural investigations and band-gap bowing parameter of GaInN alloys

(2009) M. Moret et al.   JOURNAL OF CRYSTAL GROWTH

Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates

(2008) Hirokuni Asamizu et al.   Applied Physics Express

Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes

(2008) Hisashi Yamada et al.   Applied Physics Express

Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures

(2008) Anurag Tyagi et al.   Applied Physics Express

Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation

(2008) Jayeeta Bhattacharyya et al.   APPLIED PHYSICS LETTERS

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

(2008) Hitoshi Sato et al.   APPLIED PHYSICS LETTERS

Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures

(2008) C. B. Soh et al.   APPLIED PHYSICS LETTERS

Highly Strained 1.22-$\mu$m InGaAs Lasers Grown by MOVPE

(2008) W. C. Chen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Conductively Cooled 637-nm InGaP Broad-Area Lasers and Laser Bars With Conversion Efficiencies Up to 37% and a Small Vertical Far Field of 30$^{\circ}$

(2008) Christian Kaspari et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Band gap bowing parameter of In1−xAlxN

(2008) R. E. Jones et al.   JOURNAL OF APPLIED PHYSICS

Al incorporation, structural and optical properties of AlxGa1−xN (0.13⩽x⩽0.8) alloys grown by MOCVD

(2008) B. Liu et al.   JOURNAL OF CRYSTAL GROWTH

Quantum dot lasers: From promise to high-performance devices

(2008) P. Bhattacharya et al.   JOURNAL OF CRYSTAL GROWTH

Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs

(2008) Akihiko Yoshikawa et al.   JOURNAL OF CRYSTAL GROWTH

Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers

(2008) Nikolai N. Ledentsov et al.   JOURNAL OF LIGHTWAVE TECHNOLOGY

A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode

(2008) Harumasa Yoshida et al.   Nature Photonics

Thermodynamic states and phase diagrams for bulk-incoherent, bulk-coherent, and epitaxially-coherent semiconductor alloys: Application to cubic (Ga,In)N

(2008) Jefferson Z. Liu et al.   PHYSICAL REVIEW B

InGaN: An overview of the growth kinetics, physical properties and emission mechanisms

(2007) F.K. Yam et al.   SUPERLATTICES AND MICROSTRUCTURES