Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy

Self-organized and self-catalyst growth of semiconductor and metal wires by vapour phase epitaxy: GaN rods versus Cu whiskers

(2013) Joël Eymery et al.   COMPTES RENDUS PHYSIQUE

Growth of GaN Nanorods and Wires and Spectral Tuning of Whispering Gallery Modes in Tapered GaN Wires

(2013) Christian Tessarek et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy

(2013) C. Tessarek et al.   OPTICS EXPRESS

Extraction of plasticity parameters of GaN with high temperature, in situ micro-compression

(2012) J.M. Wheeler et al.   INTERNATIONAL JOURNAL OF PLASTICITY

From strong to weak coupling regime in a single GaN microwire up to room temperature

(2012) A Trichet et al.   NEW JOURNAL OF PHYSICS

Whispering gallery modes in deformed hexagonal resonators

(2012) Marius Grundmann et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

(2011) B. Alloing et al.   APPLIED PHYSICS LETTERS

Polarity and Its Influence on Growth Mechanism during MOVPE Growth of GaN Sub-micrometer Rods

(2011) S. F. Li et al.   CRYSTAL GROWTH & DESIGN

Threading defect elimination in GaN nanowires

(2011) Stephen D. Hersee et al.   JOURNAL OF MATERIALS RESEARCH

TEM preparation method for site- and orientation-specific sectioning of individual anisotropic nanoparticles based on shadow-FIB geometry

(2011) Benito F. Vieweg et al.   ULTRAMICROSCOPY

Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer

(2010) S. P. Chang et al.   APPLIED PHYSICS LETTERS

Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

(2010) X. J. Chen et al.   APPLIED PHYSICS LETTERS

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS

Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

(2010) F. J. Xu et al.   JOURNAL OF APPLIED PHYSICS

Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

(2010) Benedikt Bauer et al.   NANOTECHNOLOGY

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

(2010) W Bergbauer et al.   NANOTECHNOLOGY

Controlling nanowire structures through real time growth studies

(2010) Frances M Ross   REPORTS ON PROGRESS IN PHYSICS

Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy

(2009) R Koester et al.   NANOTECHNOLOGY

Highly ordered catalyst-free and mask-free GaN nanorods onr-plane sapphire

(2009) T Aschenbrenner et al.   NANOTECHNOLOGY

Excellent crystallinity of truly bulk ammonothermal GaN

(2008) R. Dwiliński et al.   JOURNAL OF CRYSTAL GROWTH